Seed layers for metallic interconnects and products
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United States of America Patent
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Nov 19, 2013
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app pub date -
Jan 17, 2012
filing date -
Oct 2, 1999
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Abstract
A method is disclosed for depositing multiple seed layers for metallic interconnects over a substrate, the substrate includes a patterned insulating layer which comprises an opening surrounded by a field, said opening has sidewalls and top corners, and the method including: depositing a continuous seed layer over the sidewalls, using a first set of deposition parameters; and depositing another seed layer over the substrate, including inside the opening and over a portion of said field, using a second set of deposition parameters, wherein: the second set of deposition parameters includes one deposition parameter which is different from any parameters in the first set, or whose value is different in the first and second sets; the continuous seed layer has a thickness in a range from about 20 Å to not more than 250 Å over the field; and the combined seed layers leave sufficient room for electroplating inside the opening.
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