A method of adjustment in the manufacture of a capacitance of a capacitor supported by a substrate, the method including the steps of: a) forming a first electrode parallel to the surface of the substrate and covering it with a dielectric layer; b) forming, on a first portion of the dielectric layer, a second electrode; c) measuring the capacitance between the first electrode and the second electrode, and deducing therefrom the capacitance to be added to obtain the desired capacitance; d) thinning down a second portion of the dielectric layer, which is not covered by the second electrode, so that the thickness of this second portion is adapted to the forming of the deduced capacitance; and e) forming a third electrode on the thinned-down portion and connecting it to the second electrode.
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