Multiferroic nanoscale thin film materials, method of its facile syntheses and magnetoelectric coupling at room temperature

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United States of America Patent

PATENT NO 8591987
APP PUB NO 20100288964A1
SERIAL NO

12777175

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Abstract

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Methods of producing a multiferroic thin film material. The method includes the steps of providing a multiferroic precursor solution, subjecting the precursor solution to spin casting to produce a spin cast film, and heating the spin cast film. The precursor solution may include Bi(NO3)3.5H2O and Fe(NO3)3.9H2O in ethylene glycol to produce a bismuth ferrite film. Further, the thin film may be utilized in varied technological areas, including memory devices for information storage.

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Patent Owner(s)

Patent OwnerAddress
RESEARCH FOUNDATION OF THE CITY UNIVERSITY OF NEW YORK230 WEST 41ST STREET NEW YORK NY 10036-7207
NORTHRUP GRUMMAN SYSTEMS CORPORATION1840 CENTURY PARK EAST LOS ANGELES CA 90067

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chu, I-Wei Staten Island, US 2 18
Pirich, Ronald Islip, US 2 25
Su, Kai White Plains, US 57 618
Yang, Nan-Loh Staten Island, US 9 25

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