Pre-charge sensing scheme for non-volatile memory (NVM)
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United States of America Patent
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Nov 26, 2013
Grant Date -
Mar 15, 2012
app pub date -
Nov 22, 2011
filing date -
Sep 17, 2007
priority date (Note) -
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Abstract
The pipe effect can significantly degrade flash performance. A method to significantly reduce pipe current and (or neighbor current using a pre-charge sequence) is disclosed. A dedicated read order keeps the sensing node facing the section of the pipe which was pre-charged. The technique involves pre-charging several global bitlines (such as metal bitlines, or MBLs) and local bitlines (such as diffusion bitlines, or DBLs). The pre-charged global bitlines are selected according to a pre-defined table per each address. The selection of the global bitlines is done according to whether these global bitlines will interfere with the pipe during the next read cycle.
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