Sputtering system
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United States of America Patent
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Dec 3, 2013
Grant Date -
Jan 29, 2009
app pub date -
Feb 8, 2005
filing date -
Feb 8, 2005
priority date (Note) -
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Abstract
A magnetron sputtering system generates a high density plasma on a target by applying magnetic fields intersecting an electric field by using a plurality of magnets that are rotatably supported. The respective magnets are revolved and rotated so that the time variation of regions where a magnetic field (line of magnetic force) generated by the each magnet is orthogonal to an electric field is prevented from becoming monotonous. Further, the respective magnets are arranged to make the distances between the center of rotation and the center of revolution of the respective magnets different from each other, so that the regions where the magnetic field (line of magnetic force) generated by the each magnet is orthogonal to the electric field are dispersed in the radial direction of a target.
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