Capacitance type pressure sensor and method for manufacturing a capacitance type pressure sensor
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United States of America Patent
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Dec 10, 2013
Grant Date -
Jul 26, 2012
app pub date -
Jan 26, 2012
filing date -
Jan 26, 2011
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Abstract
A capacitance type pressure sensor includes a semiconductor substrate having a reference pressure compartment formed therein, a diaphragm formed of a portion of the semiconductor substrate and formed in a surface layer portion of the semiconductor substrate to define the reference pressure compartment, the diaphragm having a through-hole communicating with the reference pressure compartment, fillers arranged within the through-hole, and an isolation insulating layer surrounding the diaphragm to isolate the diaphragm from the remaining portion of the semiconductor substrate.
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