Resistance change memory including a resistive element
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United States of America Patent
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Feb 11, 2014
Grant Date -
Nov 24, 2011
app pub date -
Feb 7, 2011
filing date -
Feb 7, 2011
priority date (Note) -
Withdrawn
status (Latency Note)
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Abstract
According to one embodiment, a resistance change memory includes a memory cell array area and a resistive element area on a substrate. A first memory cell array in the memory cell array area includes a first control line, a second control line above first control line, and a first cell unit between the first and second control lines. A second memory cell array on the first memory cell array includes the second control line, a third control line above the second control line, and a second cell unit between the second and the third control lines. And a resistive element in the resistive element area includes resistance lines, and a resistor connected to the resistance lines. The resistor includes the same member as one of a member of the cell unit and a member of a contact plug.
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