Magneto-sensitive wire, magneto-impedance element and magneto-impedance sensor
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United States of America Patent
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Dec 17, 2013
Grant Date -
Apr 7, 2011
app pub date -
Mar 25, 2009
filing date -
Mar 28, 2008
priority date (Note) -
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Abstract
The magneto-sensitive wire of the invention has a vortex-spin structure and hence includes no magnetic domain walls, so that the magneto-sensitive wire of the invention has an excellent hysteresis characteristic exhibiting nearly zero hysteresis. Therefore, the linearity related to the output voltage characteristic for the applied magnetic field in the determination range of an MI sensor is significantly improved as compared to MI sensors using the conventional magneto-sensitive wires. Using the magneto-sensitive wire of the invention makes it possible to provide a magneto-impedance (MI) element exhibiting a higher precision than the conventional ones and further provide a sensor using such an MI element.
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