Substrate supports for semiconductor applications

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United States of America Patent

PATENT NO 8619406
APP PUB NO 20120141661A1
SERIAL NO

13117262

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Abstract

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This invention relates to substrate supports, e.g., coated electrostatic chucks, having a dielectric multilayer formed thereon; dielectric multilayers that provide erosive and corrosive barrier protection in harsh environments such as plasma treating vessels used in semiconductor device manufacture; process chambers, e.g., deposition chambers, for processing substrates; methods for protecting substrate supports; and methods for producing substrate supports and electronic devices. The dielectric multilayer comprises (a) an undercoat dielectric layer comprising a metal oxide or metal nitride formed on a surface; and (b) a topcoat dielectric layer comprising a metal oxide formed on the undercoat dielectric layer. The topcoat dielectric layer has an aluminum oxide content of less than about 1 weight percent. The topcoat dielectric layer has a corrosion resistance and/or plasma erosion resistance greater than the corrosion resistance and/or plasma erosion resistance of the undercoat dielectric layer. The undercoat dielectric layer can have a resistivity greater than the resistivity of the topcoat dielectric layer. The topcoat dielectric layer can have a dielectric constant greater than the dielectric constant of the undercoat dielectric layer. The undercoat dielectric layer can have a porosity greater than the porosity of the topcoat dielectric layer. The invention is useful, for example, in the manufacture and protection of electrostatic chucks used in semiconductor device manufacture.

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Patent Owner(s)

Patent OwnerAddress
FM INDUSTRIES INC221 WARREN AVENUE FREMONT CA 94539

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cho, Jaeyong Wappingers Falls, US 31 535
Sirman, John Anthem, US 3 109

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