Conformal metallization process for the fabrication of semiconductor laser devices
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United States of America Patent
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Jan 14, 2014
Grant Date -
Jun 27, 2013
app pub date -
Dec 21, 2011
filing date -
Dec 21, 2011
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Abstract
A method of fabricating a semiconductor laser device by forming a semiconductor structure at least part of which is in the form of a mesa structure having a flat top. The steps include depositing a passivation layer over the mesa structure, forming a contact opening in the passivation layer on the flat top of the mesa structure; and depositing a metal contact portion, with the deposited metal contact portion contacting the semiconductor structure via the contact opening. The contact opening formed through the passivation layer has a smaller area than the flat top of the mesa structure to allow for wider tolerances in alignment accuracy. The metal contact portion comprises a platinum layer between one or more gold layers to provide an effective barrier against Au diffusion into the semiconductor material.
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