NAND flash memory

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8630116
APP PUB NO 20130028020A1
SERIAL NO

13633553

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Importance

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Abstract

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A NAND flash memory, in a read operation, a p-type semiconductor substrate is set at a ground potential, a bit line is charged to a first voltage, a source line, a n-type well and a p-type well are charged to a second voltage, which lies between a ground potential and a first voltage, and in a block not selected by said row decoder, said drain-side select gate line and said source-side select gate line are charged to a third voltage, which is higher than said ground potential and is equal to or lower than said second voltage.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Isobe, Katsuaki Yokohama, JP 66 737
Maejima, Hiroshi Tokyo, JP 234 4151

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