Semiconductor device and method for fabricating the same

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United States of America Patent

PATENT NO 8637939
APP PUB NO 20110156171A1
SERIAL NO

12825007

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Abstract

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A semiconductor device includes a channel layer formed over a substrate, a gate formed over the channel layer, junction regions formed on both sides of the channel layer to protrude from the substrate, and a buried barrier layer formed between the channel layer and the junction regions.

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Patent Owner(s)

  • HYNIX SEMICONDUCTOR INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kang, Kyung-Doo Gyeonggi-do, KR 5 6

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