Semiconductor device and method of manufacturing the same
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United States of America Patent
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Feb 4, 2014
Issued Date -
N/A
app pub date -
Aug 24, 2011
filing date -
Aug 30, 2010
priority date (Note) -
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Abstract
Provided is a semiconductor device that includes a vertical MOS transistor having a trench structure capable of enhancing a driving performance of the vertical MOS transistor. A thick oxide film is formed next to a gate electrode led out of a trench of the vertical MOS transistor having the trench structure, and is removed to form a stepped portion which has a face lower than a surrounding plane and has slopes as well. This makes it possible to form a heavily doped diffusion layer right under the gate electrode through ion implantation for forming a heavily doped source diffusion layer, thereby solving a problem of no current flow in a part of a driver element and enhancing the driving performance of the vertical MOS transistor.
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