ESD power clamp using a low-voltage transistor to clamp a high-voltage supply in a mixed-voltage chip

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United States of America Patent

PATENT NO 8643988
SERIAL NO

13625986

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Abstract

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An electro-static-discharge (ESD) protection circuit is a power clamp between a high-voltage power supply VDDH and a ground. The power clamp protects high-voltage transistors in a first core and low-voltage transistors in a second core using a low-voltage clamp transistor. The low-voltage transistors have lower power-supply and snap-back voltages than the high-voltage transistors. Trigger circuits are triggered when an ESD pulse is detected on VDDH. One trigger circuit enables a gate of the low-voltage clamp transistor. A series of diodes connected between VDDH and a drain of the clamp transistor prevents latch up or snap-back during normal operation. During an ESD pulse, the series of diodes is briefly bypassed by a p-channel bypass transistor when a second trigger circuit activates an initial trigger transistor which pulses the gate of the p-channel bypass transistor low for a period of time set by an R-C network in the second trigger circuit.

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Patent Owner(s)

Patent OwnerAddress
HONG KONG APPLIED SCIENCE AND TECHNOLOGY RESEARCH INSTITUTE CO LTD5 FLOOR OPTOELECTRONICS CENTRE TWO EAST SCIENCE AVENUE SHA TIN HONGKONG NEW TERRITORIES HONGKONG CHINA HONG KONG HONG KONG

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kwong, Kwok Kuen (David) Davis, US 15 118

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