Vapor treatment process for pattern smoothing and inline critical dimension slimming
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United States of America Patent
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Feb 11, 2014
Grant Date -
Jul 4, 2013
app pub date -
Jan 3, 2012
filing date -
Jan 3, 2012
priority date (Note) -
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Abstract
A method for patterning a substrate is described. The method includes forming a layer of radiation-sensitive material on a substrate, and preparing a pattern in the layer of radiation-sensitive material using a lithographic process, wherein the pattern is characterized by a critical dimension (CD) and a roughness. Following the preparation of the pattern in the layer of radiation-sensitive material, the method further includes performing a CD slimming process to reduce the CD to a reduced CD, and performing a vapor smoothing process to reduce the roughness to a reduced roughness.
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