Non-volatile memory device and method for fabricating the same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8648409
APP PUB NO 20120223382A1
SERIAL NO

13238295

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

A method for fabricating a non-volatile memory device includes forming a channel link layer and an isolation layer surrounding the channel link layer over a substrate, forming a stack structure having interlayer dielectric layers that are alternately stacked with gate electrode layers over the channel link layer and the isolation layer, and forming a pair of channels connected to the channel link layer through the stack structure, and a memory layer interposed between the channel and the stack structure.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

  • HYNIX SEMICONDUCTOR INC.

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Joo, Han-Soo Gyeonggi-do, KR 13 143
Lee, Dong-Kee Gyeonggi-do, KR 2 12
Oh, Sang-Hyun Gyeonggi-do, KR 35 541

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
11.5 Year Payment $7400.00 $3700.00 $1850.00 Aug 11, 2025
Fee Large entity fee small entity fee micro entity fee
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00