Wafer dicing used hybrid multi-step laser scribing process with plasma etch
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United States of America Patent
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Feb 18, 2014
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app pub date -
Mar 27, 2013
filing date -
Apr 10, 2012
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Abstract
Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer. The mask is composed of a layer covering and protecting the integrated circuits. The mask is patterned with a multi-step laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits.
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