Junction Barrier Schottky diodes with current surge capability
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United States of America Patent
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Feb 18, 2014
Grant Date -
Nov 1, 2012
app pub date -
Jul 11, 2012
filing date -
May 21, 2008
priority date (Note) -
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Abstract
An electronic device includes a silicon carbide drift region having a first conductivity type, a Schottky contact on the drift region, and a plurality of junction barrier Schottky (JBS) regions at a surface of the drift region adjacent the Schottky contact. The JBS regions have a second conductivity type opposite the first conductivity type and have a first spacing between adjacent ones of the JBS regions. The device further includes a plurality of surge protection subregions having the second conductivity type. Each of the surge protection subregions has a second spacing between adjacent ones of the surge protection subregions that is less than the first spacing.
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