Electronic device with a gate electrode having at least two portions
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United States of America Patent
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Feb 25, 2014
Grant Date -
Apr 15, 2010
app pub date -
Dec 16, 2009
filing date -
Sep 27, 2005
priority date (Note) -
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Abstract
A transistor structure of an electronic device can include a gate dielectric layer and a gate electrode. The gate electrode can have a surface portion between the gate dielectric layer and the rest of the gate electrode. The surface portion can be formed such that another portion of the gate electrode primarily sets the effective work function in the finished transistor structure.
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