Nonvolatile semiconductor memory device and method of data write therein
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United States of America Patent
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Feb 25, 2014
Grant Date -
Apr 11, 2013
app pub date -
Mar 19, 2012
filing date -
Oct 7, 2011
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Abstract
A bit line is electrically connected to one end of a current path of a memory cell. A word line is commonly connected to the memory cells arranged in a direction intersecting the bit line. A control circuit executes a write operation for applying a write voltage to the word line so shift a threshold voltage of the memory cell to be data written that the threshold voltage of the memory cell to be data written reaches a certain threshold voltage. During the write operation, the control circuit, while applying a gradually rising write voltage to the word line, gradually changes a voltage applied to the bit line based on a relationship between the threshold voltage of the memory cell to be written and a number of times of the write voltage applications.
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