Copper interconnect with metal hardmask removal
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United States of America Patent
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Mar 4, 2014
Grant Date -
Dec 13, 2012
app pub date -
Jun 10, 2011
filing date -
Jun 10, 2011
priority date (Note) -
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Abstract
A passivation layer is formed on inlaid Cu for protection against oxidation and removal during subsequent removal of an overlying metal hardmask. Embodiments include treating an exposed upper surface of inlaid Cu with hydrofluoric acid and a copper complexing agent, such as benzene triazole, to form a passivation monolayer of a copper complex, etching to remove the metal hardmask, removing the passivation layer by heating to at least 300° C., and forming a barrier layer on the exposed upper surface of the inlaid Cu.
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