Schottky diode employing recesses for elements of junction barrier array
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United States of America Patent
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Mar 4, 2014
Grant Date -
Mar 14, 2013
app pub date -
Sep 11, 2011
filing date -
Sep 11, 2011
priority date (Note) -
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status (Latency Note)
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Abstract
The present disclosure generally relates to a Schottky diode that has a substrate, a drift layer provided over the substrate, and a Schottky layer provided over an active region of the substrate. A junction barrier array is provided in the drift layer just below the Schottky layer. The elements of the junction barrier array are generally doped regions in the drift layer. To increase the depth of these doped regions, individual recesses may be formed in the surface of the drift layer where the elements of the junction barrier array are to be formed. Once the recesses are formed in the drift layer, areas about and at the bottom of the recesses are doped to form the respective elements of the junction barrier array.
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