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Abstract

Method of deposition on a substrate, of a metal containing dielectric film comprising a compound of the formula (I):

description='In-line Formulae' end='lead'(M¹_1-aM²_a)O_bN_c,  (I)description='In-line Formulae' end='tail'

wherein 0≦a<1, 01 represents a metal selected from (Hf), (Zr) and (Ti); and M² represents a metal atom atoms, which comprises the following steps:

A step a) of providing a substrate into a reaction chamber;A step (b) of vaporizing a M1 metal containing precursor of the formula (II):(R1yOp)x(R2tCp)zM1R′4-x-z  (II)wherein 0≦x≦3, preferably x=0 or 1, 0≦z≦3, preferably z=1 or 2, 1≦(x+z)≦4, 0≦y≦7, preferably y=2 0≦t≦5, preferably t=1, (R1yOp) represents a pentadienyl ligand, which is either unsubstituted or substituted; (R2tCp) represents a cyclopentadienyl (Cp) ligand, which is either unsubstituted or substituted, to form a first gas phase metal source;A step c) of introducing the first gas phase metal source in the reaction chamber, in order to provoke their contact with said substrate, to generate the deposition of a metal containing dielectric film comprising a compound of the formula (I) as hereinbefore defined, on said substrate. Compound the formula (II1):(R2tCp)M1[N(R39)(R40)]3  (II1)corresponding to the formula (II) as hereinabove defined in Claim 1, wherein x=0, z=1 and R′ represents the group N(R39)(R40).

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First Claim