Method for design and manufacturing of a 3D semiconductor device

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United States of America Patent

PATENT NO 8669778
SERIAL NO

13098997

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Abstract

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A method for the design and manufacturing of a 3D semiconductor device including a first circuit stratum and a second circuit stratum, the method including: applying a synthesis tool with at least first and second technology libraries; and performing a synthesis that utilizes the at least first and second technology libraries, where the first and second technology libraries correspond to two different processes, where the first technology library targets the first circuit stratum and the second technology library targets the second circuit stratum, and where the performing a synthesis results in a netlist, the netlist includes first cells of the first technology library and second cells of the second technology library.

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Patent Owner(s)

  • MONOLITHIC 3D INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Or-Bach, Zvi San Jose, US 534 17764
Wurman, Zeev San Jose, US 43 557

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