Flexible non-volatile memory
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United States of America Patent
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Mar 18, 2014
Grant Date -
Mar 6, 2014
app pub date -
Dec 12, 2012
filing date -
Sep 6, 2012
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Abstract
A manufacturing method for manufacturing a flexible non-volatile memory is provided. The manufacturing method comprises the steps outlined below. A flexible substrate is provided. A planarization layer is formed on the flexible substrate. A metal bottom electrode layer is deposited on the planarization layer. A mask is formed to define a plurality of patterns. An AZTO layer having a plurality of electrically independent AZTO cells is deposited on the metal bottom electrode layer corresponding to the patterns. A top electrode layer is deposited on the AZTO layer corresponding to the AZTO cells to form a plurality of non-volatile memory cells.
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