Method of manufacturing semiconductor element
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United States of America Patent
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Mar 25, 2014
Grant Date -
Jun 13, 2013
app pub date -
Nov 28, 2012
filing date -
Dec 12, 2011
priority date (Note) -
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Abstract
Provided is a method of manufacturing a semiconductor element having at a cut portion with excellent quality, which minimizes a region on a silicon substrate necessary for cutting, and which prevents cutting water used when cutting by dicing is carried out from entering the semiconductor element. The method of manufacturing a semiconductor element includes: arranging, on the silicon substrate, multiple semiconductor element portions so as to be adjacent to one another; bonding the silicon substrate and a glass substrate together using the resin; and cutting the silicon substrate and the glass substrate, respectively, in a region in which the resin is provided, the cutting the silicon substrate and the glass substrate including: half-cutting the silicon substrate by dicing; cutting the glass substrate by scribing; and dividing the silicon substrate, the glass substrate, and the resin.
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