Importance

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Abstract

There is provided a method of manufacturing a semiconductor device, a semiconductor device, and a semiconductor apparatus, by which an electrode having an excellent ohmic property can be formed, and a semiconductor device having excellent device characteristics can be obtained with a high product yield. The method sequentially includes: a semiconductor device structure formation process in which a semiconductor device structure 3 is formed at least in a main surface 2a side of a first conduction type silicon carbide bulk substrate 2 having a main surface 2a and a rear surface 2b; and an ohmic electrode formation process in which an ohmic electrode 4 making ohmic contact with the silicon carbide bulk substrate 2 is formed in the rear surface 2b side of the silicon carbide bulk substrate 2, wherein the ohmic electrode formation process sequentially includes a sub-process of thinning the silicon carbide bulk substrate 2 by polishing the rear surface side 2b of the silicon carbide bulk substrate 2 and then forming the ohmic electrode 4 in the rear surface 2b, and a sub-process of performing heat treatment using an optical heating method in which high-power light is irradiated from the rear surface side 2b of the silicon carbide bulk substrate 2 to the ohmic electrode 4.

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First Claim