Asymmetric multi-gated transistor and method for forming
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United States of America Patent
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Mar 25, 2014
Grant Date -
Feb 25, 2010
app pub date -
Nov 4, 2009
filing date -
Nov 13, 2006
priority date (Note) -
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Abstract
In one embodiment, there is an asymmetric multi-gated transistor that has a semiconductor fin with a non-uniform doping profile. A first portion of the fin has a higher doping concentration while a second portion of the fin has a lower doping concentration. In another embodiment, there is an asymmetric multi-gated transistor with gate dielectrics formed on the semiconductor fin that vary in thickness. This asymmetric multi-gated transistor has a thin gate dielectric formed on a first side portion of the semiconductor fin and a thick gate dielectric formed on a second side portion of the fin.
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