Method of forming a chalcogenide material and methods of forming a resistive random access memory device including a chalcogenide material
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United States of America Patent
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Mar 25, 2014
Grant Date -
May 3, 2012
app pub date -
Nov 2, 2010
filing date -
Nov 2, 2010
priority date (Note) -
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Abstract
A method of forming a chalcogenide material on a surface of a substrate comprising exposing a surface of a substrate to ionized gas clusters from a source gas, the ionized gas clusters comprising at least one chalcogen and at least one electropositive element. A method of forming a resistive random access memory device is also disclosed. The method comprises forming a plurality of memory cells wherein each cell of the plurality of memory cells is formed by forming a metal on a first electrode, forming a chalcogenide material on the metal by a gas cluster ion beam process, and forming a second electrode on the chalcogenide material. A method of forming another resistive random access memory device and a random access memory device including the chalcogenide material are also disclosed.
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