Non-volatile semiconductor memory device and process of manufacturing the same

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United States of America Patent

PATENT NO 8679916
APP PUB NO 20140017875A1
SERIAL NO

14025548

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Abstract

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In device isolation trenches, a first device-isolation insulator film is formed to have recesses thereon and a second device-isolation insulator film is formed in the recesses. The uppermost portions at both ends of the first device-isolation insulator film are located higher than the uppermost portions at both ends of the second device-isolation insulator film.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ueno, Koki Yokohama, JP 87 607
Yaegashi, Toshitake Yokohama, JP 98 1255

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