Method of producing semiconductor device and method of producing solid-state image pickup device
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United States of America Patent
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Mar 25, 2014
Grant Date -
Aug 9, 2012
app pub date -
Jan 27, 2012
filing date -
Feb 9, 2011
priority date (Note) -
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status (Latency Note)
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Abstract
The method includes a step of forming a mask having an opening, for forming an opening in multiple insulating films, above a semiconductor substrate on which a member becoming a first insulating film, a member becoming a second insulating film being different from the member becoming the first insulating film, a member becoming a third insulating film, and a member becoming a fourth insulating film being different from the member becoming the third insulating film are stacked in this order; a first step of continuously removing the member becoming the fourth insulating film and the member becoming the third insulating film at a portion corresponding to the opening of the mask; and a second step of removing the member becoming the second insulating film, after the first step, at a portion corresponding to the opening of the mask.
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