Self-formation of high-density defect-free and aligned nanostructures

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United States of America Patent

PATENT NO 8679947
SERIAL NO

13670921

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Abstract

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A device and method for forming nanostructures includes providing a monocrystalline semiconductor layer on a flexible substrate and stressing the substrate in accordance with a crystal cleave plane to initiate cracks in the semiconductor layer. The cracks are propagated on the crystal cleave plane through the semiconductor layer where the cracks are spaced by an intercrack distance as determined by applying a particular strain. The strain is released to provide parallel structures on the flexible substrate.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheng, Cheng-Wei White Plains, US 142 576
Kim, Jeehwan White Plains, US 246 1223
Park, Hongsik Yorktown Heights, US 36 287

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