Method for forming a self-aligned contact opening by a lateral etch
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United States of America Patent
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Mar 25, 2014
Grant Date -
Nov 21, 2013
app pub date -
May 15, 2012
filing date -
May 15, 2012
priority date (Note) -
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Abstract
A self-aligned source/drain contact formation process without spacer or cap loss is described. Embodiments include providing two gate stacks, each having spacers on opposite sides, and an interlayer dielectric (ILD) over the two gate stacks and in a space therebetween, forming a vertical contact opening within the ILD between the two gate stacks, and laterally removing ILD between the two gate stacks from the vertical contact opening toward the spacers, to form a contact hole.
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