Bilayer gate dielectric with low equivalent oxide thickness for graphene devices
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United States of America Patent
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Mar 25, 2014
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app pub date -
Feb 9, 2012
filing date -
Feb 9, 2012
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Abstract
A silicon nitride layer is provided on an uppermost surface of a graphene layer and then a hafnium dioxide layer is provided on an uppermost surface of the silicon nitride layer. The silicon nitride layer acts as a wetting agent for the hafnium dioxide layer and thus prevents the formation of discontinuous columns of hafnium dioxide atop the graphene layer. The silicon nitride layer and the hafnium dioxide layer, which collectively form a low EOT bilayer gate dielectric, exhibit continuous morphology atop the graphene layer.
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