Graphene transistor with a self-aligned gate

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United States of America Patent

PATENT NO 8680512
APP PUB NO 20130009133A1
SERIAL NO

13614530

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Abstract

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A transistor structure is provided which includes a graphene layer located on an insulating layer, a first metal portion overlying a portion of the graphene layer, a second metal portion contacting and overhanging the first metal portion, a first electrode contacting a portion of the graphene layer and laterally offset from a first sidewall of the first metal portion by a lateral spacing, and a second electrode contacting another portion of the graphene layer and laterally offset from a second sidewall of the first metal portion by the lateral spacing.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Avouris, Phaedon Yorktown Heights, US 65 2547
Farmer, Damon B White Plains, US 71 698
Lin, Yu-Ming West Harrison, US 524 1768
Zhu, Yu West Harrison, US 359 3288

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