Semiconductor light-emitting device and lighting instrument employing the same
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United States of America Patent
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Mar 25, 2014
Grant Date -
Sep 15, 2011
app pub date -
Sep 7, 2010
filing date -
Mar 10, 2010
priority date (Note) -
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Abstract
A semiconductor light-emitting device according to the embodiment includes a substrate, a compound semiconductor layer, a metal electrode layer provided with particular openings, a light-extraction layer, and a counter electrode. The light-extraction layer has a thickness of 20 to 120 nm and covers at least partly the metal part of the metal electrode layer; or otherwise the light-extraction layer has a rugged structure and covers at least partly the metal part of the metal electrode layer. The rugged structure has projections so arranged that their summits are positioned at intervals of 100 to 600 nm, and the heights of the summits from the surface of the metal electrode layer are 200 to 700 nm.
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