Nonvolatile semiconductor memory device and method of manufacturing the same
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United States of America Patent
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Mar 25, 2014
Grant Date -
Aug 19, 2010
app pub date -
Feb 16, 2010
filing date -
Feb 17, 2009
priority date (Note) -
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status (Latency Note)
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Abstract
A first region comprises: a semiconductor layer including a columnar portion, a charge storage layer, and a plurality of first conductive layers. The second region comprises: a plurality of second conductive layers formed in the same layer as the plurality of first conductive layers. The plurality of first conductive layers configure a stepped portion at an end vicinity of the first region. The stepped portion is formed in a stepped shape such that positions of ends of the plurality of first conductive layers differ from one another. The plurality of second conductive layers is formed such that positions of ends thereof at an end vicinity of the second region surrounding the first region are aligned in substantially the perpendicular direction to the substrate.
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