Raised source/drain field effect transistor
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United States of America Patent
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Mar 25, 2014
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N/A
app pub date -
Oct 19, 2012
filing date -
Aug 2, 2010
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Abstract
In one exemplary embodiment of the invention, a semiconductor structure includes: a substrate; and a plurality of devices at least partially overlying the substrate, where the plurality of devices include a first device coupled to a second device via a first raised source/drain having a first length, where the first device is further coupled to a second raised source/drain having a second length, where the first device comprises a transistor, where the first raised source/drain and the second raised source/drain at least partially overly the substrate, where the second raised source/drain comprises a terminal electrical contact, where the second length is greater than the first length.
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