Magnetoresistive element and magnetic memory

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United States of America Patent

PATENT NO 8680632
APP PUB NO 20120241881A1
SERIAL NO

13310154

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including MnxGa100-x (45≦x<64 atomic %); a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer, and including a second magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the second magnetic film including MnyGa100-y (45≦y<64 atomic %). The first and second magnetic layers include different Mn composition rates from each other, a magnetization direction of the first magnetic layer is changeable by a current flowing between the first magnetic layer and the second magnetic layer via the first nonmagnetic layer.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION;WPI-AIMR, TOHOKU UNIVERSITY

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Amano, Minoru Sagamihara, JP 89 2287
Ando, Koji Tsukuba, JP 112 1680
Daibou, Tadaomi Yokohama, JP 76 1532
Fukushima, Akio Tsukuba, JP 74 899
Ito, Junichi Yokohama, JP 210 3203
Kai, Tadashi Tokyo, JP 126 2601
Kubota, Hitoshi Tsukuba, JP 120 2197
Kubota, Takahide Sendai, JP 26 164
Miyazaki, Terunobu Sendai, JP 17 262
Mizukami, Shigemi Sendai, JP 11 192
Nagahama, Taro Tsukuba, JP 11 305
Yakushiji, Kay Tsukuba, JP 12 168
Yoda, Hiroaki Sagamihara, JP 264 5630
Yuasa, Shinji Tsukuba, JP 53 805

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