Importance

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Abstract

A device excellent in electrical characteristics is provided by suppressing an operation failure owing to a hysteresis effect that occurs in a circuit using MOS transistors having floating bodies. Moreover, sensitivity of a sense amplifier circuit and a latch circuit including these MOS transistors as components is improved. A signal required in a circuit other than a first circuit is outputted by using electrical characteristics of MOS transistors in a first period (effective period), and in a second period (idle period) excluding the first period, between the gate and source of MOS transistors, a step waveform voltage not less than threshold voltages of these MOS transistors is given.

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First Claim