Non-volatile semiconductor memory device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8681556
APP PUB NO 20130026566A1
SERIAL NO

13425704

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Abstract

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A non-volatile semiconductor memory device according to an embodiment includes: a p-type semiconductor substrate; a p-type first p well which is formed in the semiconductor substrate and in which a bit line connecting transistor configured to connect a bit line of a memory cell and a sense amplifier unit is formed; and an n-type first N well which surrounds the first P well and which is configured to electrically isolate the first P well from the semiconductor substrate.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kutsukake, Hiroyuki Kanagawa, JP 66 357
Sugimae, Kikuko Kanagawa, JP 101 914

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