Word line voltage boost system and method for non-volatile memory devices and memory devices and processor-based system using same
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United States of America Patent
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Mar 25, 2014
Grant Date -
Jul 14, 2011
app pub date -
Mar 23, 2011
filing date -
May 4, 2007
priority date (Note) -
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Abstract
The voltage of a selected word line is increased beyond the voltage to which a respective string driver transistor is capable of driving the word line by capacitively coupling a voltage to the selected word line from adjacent word lines. The voltage is capacitively coupled to the selected word line by increasing the voltages of the adjacent word lines after a programming voltage has been applied to a string driver transistor for the selected word line and after a string driver voltage has been applied to the gates of all of the string driver transistors in an array.
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