Structure and fabrication method for resistance-change memory cell in 3-D memory

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United States of America Patent

PATENT NO 8686419
APP PUB NO 20110204316A1
SERIAL NO

13029361

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Abstract

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A memory device in a 3-D read and write memory includes a resistance-changing layer, and a local contact resistance in series with, and local to, the resistance-changing layer. The local contact resistance is established by a junction between a semiconductor layer and a metal layer. Further, the local contact resistance has a specified level of resistance according to a doping concentration of the semiconductor and a barrier height of the junction. A method for fabricating such a memory device is also presented.

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Patent Owner(s)

  • SANDISK TECHNOLOGIES LLC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kreupl, Franz Mountain View, US 76 2205
Sekar, Deepak C San Jose, US 220 3440

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