Magnetic stack with oxide to reduce switching current

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United States of America Patent

PATENT NO 8686524
APP PUB NO 20120241886A1
SERIAL NO

13491763

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Abstract

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A magnetic stack having a ferromagnetic free layer, a metal oxide layer that is antiferromagnetic at a first temperature and non-magnetic at a second temperature higher than the first temperature, a ferromagnetic pinned reference layer, and a non-magnetic spacer layer between the free layer and the reference layer. During a writing process, the metal oxide layer is non-magnetic. For magnetic memory cells, such as magnetic tunnel junction cells, the metal oxide layer provides reduced switching currents.

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Patent Owner(s)

  • SEAGATE TECHNOLOGY LLC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gao, Zheng San Jose, US 258 4701
Lou, Xiaohua Bloomington, US 46 569
Tian, Wei Bloomington, US 176 1285
Zheng, Yuankai Bloomington, US 110 2150
Zhu, Wenzhong Apple Valley, US 103 1331

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