High-frequency semiconductor switch and terminal device
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United States of America Patent
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Apr 1, 2014
Grant Date -
Jun 6, 2013
app pub date -
Aug 22, 2012
filing date -
Dec 1, 2011
priority date (Note) -
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status (Latency Note)
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Abstract
A high-frequency semiconductor switch includes a serial-parallel conversion circuit, a power supply circuit, and a drive circuit. In the serial-parallel conversion circuit, a parallel data signal is formed from a serial data signal input thereto. In the power supply circuit, a first positive voltage, a second positive voltage, and a negative voltage are formed from a high-potential power source supplied thereto. The drive circuit is supplied with the first positive voltage, the second positive voltage, and the negative voltage, and includes an inverter to which the parallel data signal is input and a differential type of level shifter to which the parallel data signal and the output signal of the inverter is provided. The drive circuit outputs the second positive voltage as a high level signal, and the negative voltage as a low level signal, to a switching circuit, and the switching circuit performs selective switching based thereon.
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