Analog sensing of memory cells with a source follower driver in a semiconductor memory device
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United States of America Patent
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Apr 1, 2014
Grant Date -
Oct 17, 2013
app pub date -
Jun 17, 2013
filing date -
Mar 17, 2008
priority date (Note) -
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Abstract
Memory devices, methods, and sample and hold circuits are disclosed, including a memory device that includes a sample and hold circuit coupled to a bit line. One such sample and hold circuit includes a read circuit, a verify circuit, and a reference circuit. The read circuit stores a read threshold voltage that was read from a selected memory cell. The verify circuit stores a target threshold voltage that is compared to the read threshold voltage to generate an inhibit signal when the target and read threshold voltages are substantially equal. The reference circuit stores a reference threshold voltage that can be used to translate the read threshold voltage to compensate for a transistor voltage drop and/or temperature variations.
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