Photoresist pattern forming method, and microlens array forming method

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United States of America Patent

PATENT NO 8691495
SERIAL NO

13593929

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Abstract

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A photoresist pattern forming method, comprising a first step of forming on an underlayer a photoresist film which includes a convex portion and a concave portion having a thickness thinner than a thickness of the convex portion, and a second step of processing the photoresist film to form, in a portion which has been the convex portion, an opening having a width narrower than a width of the convex portion, wherein in the second step, the convex portion of the photoresist film is at least partially exposed, and the photoresist film is then developed, and exposure light is condensed by the convex portion in exposing the photoresist film.

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Patent Owner(s)

  • CANON KABUSHIKI KAISHA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hirayama, Satoshi Yokohama, JP 18 110
Uehira, Kousei Tokyo, JP 1 0

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