Thin-film transistor, method of producing the same, and devices provided with the same
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United States of America Patent
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Apr 8, 2014
Grant Date -
Jun 16, 2011
app pub date -
Dec 9, 2010
filing date -
Dec 10, 2009
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Abstract
A thin-film transistor including an oxide semiconductor layer is disclosed. The oxide semiconductor layer includes a first area, a second area and a third area forming a well-type potential in the film-thickness direction. The first area forms a well of the well-type potential and has a first electron affinity. The second area is disposed nearer to the gate electrode than the first area and has a second electron affinity smaller than the first electron affinity. The third area is disposed farther from the gate electrode than the first area and has a third electron affinity smaller than the first electron affinity. At least an oxygen concentration at the third area is lower than an oxygen concentration at the first area.
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