Semiconductor light emitting device
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United States of America Patent
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Apr 8, 2014
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N/A
app pub date -
Mar 21, 2011
filing date -
Jun 7, 2010
priority date (Note) -
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Abstract
According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, and a second insulating layer. The semiconductor layer includes a first major surface, a second major surface opposite to the first major surface, and a light emitting layer. The first electrode is provided on a region including the light emitting layer on the second major surface. The second electrode is provided on the second major surface and interposed in the first electrode in a planar view.
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