Semiconductor memory device and method of manufacturing the same

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United States of America Patent

PATENT NO 8692312
APP PUB NO 20130062683A1
SERIAL NO

13428506

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Abstract

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According to one embodiment, a method of manufacturing a semiconductor memory device is provided. In the method, a laminated body in which a first silicon layer, a first sacrificial layer, a second silicon layer, and a second sacrificial layer are laminated in turn is formed. A first insulating film is formed on the laminated body. A trench is formed in the laminated body and the first insulating film. A third sacrificial layer is formed into the trench. The third sacrificial layer is etched by wet etching to be retreated from a top surface of the third sacrificial layer, thereby etching end faces of the first sacrificial layer and the second sacrificial layer.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fukuzumi, Yoshiaki Yokohama, JP 333 10802
Imamura, Takeshi Yokkaichi, JP 213 2033
Kito, Masaru Kuwana, JP 232 11011

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